| Osa number : |
RN2704JE(TE85L,F) |
| Tootja / bränd : |
Toshiba Semiconductor and Storage |
| Kirjeldus : |
TRANS 2PNP PREBIAS 0.1W ESV |
| RoHSi staatus : |
Plii vaba / RoHS vastavuses |
| Saadaval olev kogus |
335783 pcs |
| Andmelehed |
RN2704JE(TE85L,F).pdf |
| Pinge - koguja emitteri jaotus (max) |
50V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
| Transistori tüüp |
2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Pakkuja seadme pakett |
ESV |
| Seeria |
- |
| Takisti - emitteri alus (R2) |
47 kOhms |
| Takisti - alus (R1) |
47 kOhms |
| Võimsus - maks |
100mW |
| Pakend |
Cut Tape (CT) |
| Pakett / kott |
SOT-553 |
| Muud nimed |
RN2704JE(TE85LF)CT |
| Paigaldus tüüp |
Surface Mount |
| Niiskuse tundlikkuse tase (MSL) |
1 (Unlimited) |
| Lead Free status / RoHS staatus |
Lead free / RoHS Compliant |
| Sagedus - üleminek |
200MHz |
| Täpsem kirjeldus |
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV |
| DC voolu võimendus (hFE) (Min) @ Ic, Vce |
80 @ 10mA, 5V |
| Praegune - koguja piiramine (max) |
100nA (ICBO) |
| Praegune - koguja (Ic) (maksimaalne) |
100mA |
Toshiba Semiconductor and Storage
